Описание на продукта
Параметри на продукта
Производител
Kingston
Размер на паметта
8 GB
Окомплектоване
1x8GB
Тип памет
DDR3
Параметри на продукта
Производител
Kingston
Размер на паметта
8 GB
Окомплектоване
1x8GB
Тип памет
DDR3
Описание на продукта
8GB DDR3L 1600MHz, Kingston KVR16LE11/8I, ECC, 1.35V
KVR16LE11/8I
Features
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address 000 only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Thermal Sensor Grade B
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18 (30mm), double sided component
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min. )
Refresh to Active/Refresh 260ns (min. )
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min. )
Maximum Operating Power (1.35V) = 1.822 W*
(1.50V) = 2.025 W*
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o
C
Storage Temperature -55o C to +100o
C
KVR16LE11/8I
Features
JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
800MHz fCK for 1600Mb/sec/pin
8 independent internal bank
Programmable CAS Latency: 11, 10, 9, 8, 7, 6
Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
8-bit pre-fetch
Burst Length: 8 (Interleave without any limit, sequential with
starting address 000 only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
Bi-directional Differential Data Strobe
Thermal Sensor Grade B
Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
On Die Termination using ODT pin
Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
Asynchronous Reset
PCB: Height 1.18 (30mm), double sided component
SPECIFICATIONS
CL(IDD) 11 cycles
Row Cycle Time (tRCmin) 48.125ns (min. )
Refresh to Active/Refresh 260ns (min. )
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min. )
Maximum Operating Power (1.35V) = 1.822 W*
(1.50V) = 2.025 W*
UL Rating 94 V - 0
Operating Temperature 0o
C to 85o
C
Storage Temperature -55o C to +100o
C
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