Описание на продукта
Параметри на продукта
Производител
Kingston
Размер на паметта
8 GB
Окомплектоване
1x8GB
Тип памет
DDR4
Параметри на продукта
Производител
Kingston
Размер на паметта
8 GB
Окомплектоване
1x8GB
Тип памет
DDR4
Описание на продукта
Kingston 8GB 1Rx8 1G x 72-Bit PC4-2400
KVR24R17S8/8
ValueRAM's KVR24R17S8/8 is a 1G x 72-bit (8GB) DDR4-2400
CL17 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8,
ECC, memory module, based on nine 1G x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin
DIMM uses gold contact fingers. The electrical and mechanical
specifications are as follows:
FEATURES
Power Supply: VDD=1.2V (1.14V to 1.26V)
VDDQ = 1.2V (1.14V to 1.26V)
VPP - 2.5V (2.375V to 2.75V)
VDDSPD=2.25V to 2.75V
Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive.
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported
SPECIFICATIONS
CL(IDD) 17 cycles
Row Cycle Time (tRCmin) 46.16ns(min. )
Refresh to Active/Refresh
Command Time 1x mode (tRFCmin) 350ns(min. )
Row Active Time (tRASmin) 32.00ns(min. )
Maximum Operating Power TBD W*
UL Rating 94 V - 0
Operating Temperature 0o C to +85oC
KVR24R17S8/8
ValueRAM's KVR24R17S8/8 is a 1G x 72-bit (8GB) DDR4-2400
CL17 SDRAM (Synchronous DRAM) registered w/ parity, 1Rx8,
ECC, memory module, based on nine 1G x 8-bit FBGA
components. The SPD is programmed to JEDEC standard
latency DDR4-2400 timing of 17-17-17 at 1.2V. Each 288-pin
DIMM uses gold contact fingers. The electrical and mechanical
specifications are as follows:
FEATURES
Power Supply: VDD=1.2V (1.14V to 1.26V)
VDDQ = 1.2V (1.14V to 1.26V)
VPP - 2.5V (2.375V to 2.75V)
VDDSPD=2.25V to 2.75V
Functionality and operations comply with the DDR4 SDRAM datasheet
16 internal banks
Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for
the banks in the same or different bank group accesses are available
Data transfer rates: PC4-2400, PC4-2133, PC4-1866, PC4-1600
Bi-Directional Differential Data Strobe
8 bit pre-fetch
Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)
Supports ECC error correction and detection
On-Die Termination (ODT)
Temperature sensor with integrated SPD
This product is in compliance with the RoHS directive.
Per DRAM Addressability is supported
Internal Vref DQ level generation is available
Write CRC is supported at all speed grades
CA parity (Command/Address Parity) mode is supported
SPECIFICATIONS
CL(IDD) 17 cycles
Row Cycle Time (tRCmin) 46.16ns(min. )
Refresh to Active/Refresh
Command Time 1x mode (tRFCmin) 350ns(min. )
Row Active Time (tRASmin) 32.00ns(min. )
Maximum Operating Power TBD W*
UL Rating 94 V - 0
Operating Temperature 0o C to +85oC
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